Science of Nanoscale Systems and their Device Applications
Science of Nanoscale Systems and their Device Applications
2004 Research Results

Growth of Single-Crystal VO2 Nanowires
H. Park and B.I. Halperin

Growth of Single-Crystal VO2 Nanowires

(a) High resolution TEM image of a representative VO2 nanowire, illustrating lattice fringes.
(b) Diagram of a nanowire with the growth surfaces indicated.
Synthesis of single-crystal VO2 nanowires was achieved using a simple vapor transport method in a tube furnace. VO2 is an attractive material for a Mott field effect transistor, where the channel undergoes an electrically driven Mott metal-insulator transition.

 

  Last Modified June 20, 2006 by the NSEC Office.